物理学报Issue(1)：018501-1-018501-6,6.DOI:10.7498/aps.63.018501
累积剂量影响静态随机存储器单粒子效应敏感性研究
Synergistic effects of total ionizing dose on the single event effect sensitivity of static random access memory
摘要
Abstract
The single event effect sensitivity of static random access memory(SRAM) under different cumulative dose were carried out using 60 Co γ source and heavy ions. The trend of sensitivity was obtained and the radiation damage mechanism was analyzed theoretically. This investigation shows that the variation in single event upset cross section with increasing accumulated dose appears to be consistent with the radiation-induced leakage current originating in the memory cells that affects the parameters such as low-level hold voltage and high-level fall time and induces“con-imprint effect”. Results obtained support the reliability analysis of the aerospace devices in space radiation environment.关键词
累积剂量/单粒子效应/静态随机存储器/反印记效应Key words
total dose/single event upset/SRAM/con-imprint effect引用本文复制引用
肖尧,郭红霞,张凤祁,赵雯,王燕萍,丁李利,范雪,罗尹虹,张科营..累积剂量影响静态随机存储器单粒子效应敏感性研究[J].物理学报,2014,(1):018501-1-018501-6,6.基金项目
电子薄膜与集成器件国家重点实验室(批准号：KFJJ201306)资助的课题.@@@@Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (Grant No. KFJJ201306) （批准号：KFJJ201306）
