| 注册
首页|期刊导航|物理学报|使用PTB7作为阳极修饰层提高有机发光二极管的性能

使用PTB7作为阳极修饰层提高有机发光二极管的性能

黄迪 徐征 赵谡玲

物理学报Issue(2):027301-1-027301-5,5.
物理学报Issue(2):027301-1-027301-5,5.DOI:10.7498/aps.63.027301

使用PTB7作为阳极修饰层提高有机发光二极管的性能

Enhanced p erformance of organic light-emitting dio des by using PTB7 as ano de mo dification layer

黄迪 1徐征 2赵谡玲1

作者信息

  • 1. 北京交通大学,发光与光信息技术教育部重点实验室,北京 100044
  • 2. 北京交通大学光电子技术研究所,北京 100044
  • 折叠

摘要

Abstract

Poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b’]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3, 4-b]thiophenediyl]] (PTB7) is used as an anode modification layer to fabricate organic light-emitting diode (OLED) with the configuration of ITO/PTB7 (with different concentrations)/NPB(40 nm)/Alq3(60 nm)/LiF(1 nm)/Al, and the effect of PTB7 concentration on the performance of device is investigated. The best concentration of PTB7 is 0.25 mg/mL, while the best device turn-on voltage is 4.3 V. For the best device, its maximum luminance is 45800 cd/m2 at a driving voltage of 14.6 V, its maximum current efficiency is 9.1 cd/A, its turn-on voltage is reduced by 1.9 V and the maximum luminance is increased by 78.5% compared with that of the device without PTB7. The improvement of its performance is ascribed to the fact that the hole injection and transport ability are improved by the layer of PTB7.

关键词

有机发光二极管/PTB7/阳极修饰层/空穴注入

Key words

organic light-emitting diode/PTB7/anode modification layer/hole injection

引用本文复制引用

黄迪,徐征,赵谡玲..使用PTB7作为阳极修饰层提高有机发光二极管的性能[J].物理学报,2014,(2):027301-1-027301-5,5.

基金项目

国家重点基础研究发展计划(批准号:2010CB327704)、国家自然科学基金(批准号:51272022)、教育部新世纪优秀人才支持计划(批准号:NCET-10-0220)和中央高校基本科研业务费专项资金(批准号:2012JBZ001)资助的课题.@@@@ Project supported by the National Basic Research Program of China (Grant No.2010CB327704), the National Natural Science Foundation of China (Grant No.51272022), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0220) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No.2012JBZ001) (批准号:2010CB327704)

物理学报

OA北大核心CSCDCSTPCDSCI

1000-3290

访问量0
|
下载量0
段落导航相关论文