物理学报Issue(2)：027303-1-027303-5,5.DOI:10.7498/aps.63.027303
在预刻蚀的衬底上通过分子束外延直接生长出拓扑绝缘体薄膜的微器件
Growth of micro-devices of top ological insulator thin films by molecular b eam epitaxy on substrates pre-patterned with photolithography
摘要
Abstract
In the fabrication of micrometer-sized structures from an epitaxial topological insulator thin film with photolithogra-phy, the film is usually deteriorated by the chemicals used in the process. By molecular beam epitaxy of (BixSb1-x)2Te3 topological insulator onto Hall bar-shaped plateaus pre-lithographed on SrTiO3 substrate, we have directly prepared Hall bar devices of epitaxial topological insulator thin film, avoiding the degradation of film quality in photolithography. Atomic force microscope and transport measurements have demonstrated that the Hall bar devices have the similar properties as that of (BixSb1-x)2Te3 films epitaxied on ordinary SrTiO3 substrates. The new microfabrication method can not only help to realize various novel quantum phenomena predicted in topological insulators but be applied to other epitaxial low-dimensional systems as well.关键词
拓扑绝缘体/钛酸锶/光刻/霍尔效应Key words
topological insulator/SrTiO3/phtotolithography/Hall effect引用本文复制引用
韦庞,李康,冯硝,欧云波,张立果,王立莉,何珂,马旭村,薛其坤..在预刻蚀的衬底上通过分子束外延直接生长出拓扑绝缘体薄膜的微器件[J].物理学报,2014,(2):027303-1-027303-5,5.基金项目
国家自然科学基金面上项目(批准号:11174343)和国家自然科学基金重点项目(批准号:11134008)资助的课题.@@@@ Project supported by the General Program of the National Natural Science Foundation of China (Grant No.11174343) and the Key Program of the National Natural Science Foundation of China (Grant No.11134008) （批准号:11174343）
