物理学报Issue(2)：028803-1-028803-6,6.DOI:10.7498/aps.63.028803
硅片及其太阳电池的光衰规律研究
Study on light-induced degradation of silicon wafers and solar cells
摘要
Abstract
In this paper, the laws of light-induced degradation (LID) in silicon wafers and solar cells are investigated by using xenon lamp as light source. There are tested 15 types of the silicon wafers contain the including primary wafer, chemical thinned wafer, thermal oxidation passivation wafer, passivation SiNx : H wafer deposited by plasma enhanced chemical vapor deposition, iodine passivation wafers of three different types of silicons: B-doped CZ-Silicon, B-doped Multicrystalline (MC) silicon, and B-doped Upgraded-Metallurgical-grade (UMG) silicon. There are tested 3 types of silicon solar cells: CZ solar cell, MC solar cell, and UMG solar cell. The light intensity is 1000 W/m2 in test. By using WT-2000 tester and solar cells I-V tester, the variations of minority carrier lifetimes of silicon wafers and the I-V characteristic parameters of solar cells with time of light exposure are tested and recorded. Finally the law of LID is found. Under our light condition (light source is a xenon lamp with a light intensity of 1000 W/m2), all kinds of silicon wafers and solar cells are degraded rapidly within the first 60 min, then slowly until the 180 min, finally the rate tends to 0. The LID becomes very slight after 180 min lighting.关键词
硅/光致衰减/少子寿命/太阳电池Key words
silicon/light-induced degradation/minority carrier lifetime/solar cells引用本文复制引用
曾湘安,艾斌,邓幼俊,沈辉..硅片及其太阳电池的光衰规律研究[J].物理学报,2014,(2):028803-1-028803-6,6.基金项目
国家自然科学基金(批准号:50802118)、广东省战略性新兴产业核心技术攻关项目(批准号:2011A032304001)和中央高校基本研究经费青年教师培育项目(批准号:11lgpy40)资助的课题.@@@@ Project supported by the National Natural Science Foundation of China (Grant No.50802118), the Strategic Emerging Industries Core Technology Research Projects of Guangdong Province, China (Grant No.2011A032304001), and the Central Universities Nurture Young Teachers of Basic Research Funding Projects, China (Grant No.11lgpy40) （批准号:50802118）
