热退火对Mn离子注入非故意掺杂GaN微结构、光学及磁学特性的影响
Influences of p ost-heat treatment on microstructures, optical and magnetic prop erties of unintentionally dop ed GaN epilayers implanted with Mn ions
摘要
Abstract
In this study, GaN : Mn thin films are fabricated by implementing Mn ions into the undoped GaN material. The effects of annealing temperature on microstructures, optical and magnetic properties of the thin films are investigated. The Raman spectra measured from Mn-implanted GaN samples at different annealing temperatures show that new phonon modes, which are related to macroscopic disorder or vacancy-related defects caused by Mn-ion implantation and the local vibrational mode of Mn atoms in the (Ga, Mn)N, are created. The results of photoluminescence measurement show that new peaks appear at 2.16, 2.53, and 2.92 eV. Among these, the new emission around 2.16 eV, besides some contributions from optical transitions from the conduction band or shallow donor to a deep acceptor, cannot exclude the contribution from optical transitions of free electrons in the conduction band to Mn acceptor level. The Hall test shows that the annealed samples are of n type. Ferromagnetism is observed in the Mn doped GaN thin film at 300 K and found to be sensitive to the density of holes that mediate the Mn-Mn magnetic exchange interaction in this Mn-related impurity band.关键词
Mn掺杂GaN/光致发光/室温铁磁性/退火Key words
Mn-doped GaN/photoluminescence/room temperature ferromagnetism/annealing引用本文复制引用
徐大庆,张义门,娄永乐,童军..热退火对Mn离子注入非故意掺杂GaN微结构、光学及磁学特性的影响[J].物理学报,2014,(4):047501-1-047501-6,6.基金项目
陕西省教育厅科研计划项目(批准号:11JK0912)、西安科技大学科研培育基金(批准号:2010011)、西安科技大学博士科研启动基金(批准号:2010QDJ029)、国防预研基金(批准号:9140A08040410DZ106)和中央高等学校基本科研业务费(批准号:JY10000925005)资助的课题.* Project supported by the Scientific Research Program Funded by Shaanxi Provincial Education Department, China (Grant No.11JK0912), the Scientific Research Training Foundation of Xi’an University of Science and Technology, China (Grant No.2010011), the Staring Foundation of Scientific Research for the Doctor of Xi’an University of Science and Tech-nology, China (Grant No.2010QDJ029), the Advanced Research Foundation for National Defense of China (Grant No.9140A08040410DZ106), and the Fundamental Scientific Research Fund for the Central Universities of China (Grant No. JY10000925005) （批准号:11JK0912）
