物理学报Issue(5)：053201-1-053201-6,6.DOI:10.7498/aps.63.053201
低速84Kr15+,17+离子轰击GaAs单晶
Slow ions 84Kr15+,17+ bombardment on GaAs
摘要
Abstract
We have investigated surface morphology and visible light emission from slow ions Kr15+,17+ colliding with GaAs (100). The surface disorder of GaAs films mainly depends on the charge state of incident ions. The two spectral lines of target atom Ga belong to transitions of Ga I 4p 2Po1/2-5s 2S1/2 at 403.2 nm and 4p 2Po3/2-5s 2S1/2 at 417.0 nm. Light emissions of target species depend on the energy of the incident ions deposited on the target surface atoms. During the neutralization process, the four spectral lines of Kr+ respectively can be attributed to the transitions of Kr II 4d 4F7/2-5p 2Do5/2 at 410.0 nm, 5s 2P3/2-5p 4So3/2 at 430.4 nm, 5p 4Do3/2-4d 2D3/2 at 434.0 nm and Kr II 4d 4D1/2-5p 2So1/2 at 486.0 nm. They are induced by cascade de-excitation after many electrons of the conductions band of the solid surface captured in highly excited states of the incident ion. Intensities of these six spectral lines from incident ions Kr17+ are obviously larger than Kr15+′s.关键词
表面形貌/光谱/高激发态Key words
surface morphology/spectrum/highly excited states引用本文复制引用
杨变,杨治虎,徐秋梅,郭义盼,武晔虹,宋张勇,蔡晓红..低速84Kr15+,17+离子轰击GaAs单晶[J].物理学报,2014,(5):053201-1-053201-6,6.基金项目
国家自然科学基金(批准号:11174296)和国家重点基础研究发展973计划(批准号:2010CB832901)资助的课题@@@@Project supported by the National Natural Science Foundation of China (Grant No.11174296), and the National Basic Research Program of China (Grant No.2010CB832901) （批准号:11174296）
