物理学报Issue(5)：056102-1-056102-7,7.DOI:10.7498/aps.63.056102
60Co-γ射线辐照CMOS有源像素传感器诱发暗信号退化的机理研究
Research on dark signal degradation in 60Coγ-ray-irradiated CMOS active pixel sensor
摘要
Abstract
A study of ionizing radiation effects is presented for CMOS active pixel sensors manufactured in a 0.5-µm CMOS (complementary metal oxide semiconductor)by n-well technology. The basic mechanisms that may cause failure are also presented. After exposure in γ-rays, the most sensitive parts to radiation-dark signals and dark signal non-uniformity are discussed, i.e. the physical mechanism of the degradation by irradiation. One can see from the experiment that the mean dark signals are dramatically increased with total dose for both operated and static devices. Static device seems more affected by irradiation than operated device. We find that most part of the total dark signal in a pixel comes from the depletion of the photodiode edge at the surface and the rest part is caused by the leakage of the source region of the reset transistor. Dark signal non-uniformity follows the dark current evolution with total dose. Further study of photodiode and LOCOS (local oxidation of silicon) isolation behaviors under irradiation should be done so as to correctly use this qualification techniques on MOS sensors manufactured in CMOS n-well technology process.关键词
CMOS有源像素传感器/暗信号/60 Co-γ射线/损伤机理Key words
CMOS APS/dark signal/60 Coγ-rays/damage mechanism引用本文复制引用
汪波,马武英,李豫东,郭旗,刘昌举,文林,玛丽娅,孙静,王海娇,丛忠超..60Co-γ射线辐照CMOS有源像素传感器诱发暗信号退化的机理研究[J].物理学报,2014,(5):056102-1-056102-7,7.基金项目
国家自然科学基金(批准号:11005152)资助的课题@@@@Project supported by the National Natural Science Foundation of China (Grant No.11005152) （批准号:11005152）
