物理学报Issue(6)：067202-1-067202-8,8.DOI:10.7498/aps.63.067202
基于Cu/SiOx/Al结构的阻变存储器多值特性及机理的研究
Multilevel switching mechanism for resistive random access memory based on Cu/SiOx/Al structure
摘要
Abstract
In this paper, resistive switching device based on Cu/SiOx/Al structure is fabricated to examine its resistive switch-ing characteristics and explore its resistive switching mechanisms. By adjusting limiting current, four stable resistance states are obtained. All of the resistive ratios between adjacent resistance states are over than 10. Moreover, the reten-tion data of these four states at room temperature keep stable up to 1000 s. The temperature-dependent measurement and I-V curves fitting results show that the resistive switching mechanisms of the four states are different: resistance states 1 and 2 are due to Ohmic conduction mechanism, resistance state 3 is due to Pool-Frenkel emission, and resistance state 4 is due to Schottky emission mechanism. Subsequently, a resistive switching model for Cu/SiOx/Al structure is proposed.关键词
阻变存储器/SiOx薄膜/多值存储/阻变机理Key words
resistive random access memory/SiOx thin film/multilevel/resistive switching mechanism引用本文复制引用
陈然,周立伟,王建云,陈长军,邵兴隆,蒋浩,张楷亮,吕联荣,赵金石..基于Cu/SiOx/Al结构的阻变存储器多值特性及机理的研究[J].物理学报,2014,(6):067202-1-067202-8,8.基金项目
国家自然科学基金(批准号:61274113,11204212)、教育部新世纪优秀人才支持计划(批准号：NCET-11-1064)、天津市科技计划项目(批准号:13JCYBJC15700,13JCZDJC26100)和天津市高等学校科技发展基金计划(批准号:20100703,20130701)资助的课题.@@@@Project supported by the National Natural Science Foundation of China (Grant Nos.61274113,11204212), the Program for New Century Excellent Talents in University, China (Grant No. NCET-11-1064), the Tianjin Natural Science Foundation, China (Grant Nos.13JCYBJC15700,13JCZDJC26100), and the Tianjin Science and Technology Developmental Funds of Universities and Colleges, China (Grant Nos.20100703,20130701) （批准号:61274113,11204212）
