物理学报Issue(6)：067203-1-067203-6,6.DOI:10.7498/aps.63.067203
Cu元素对Cu（In，Ga）Se2薄膜及太阳电池的影响
Effects of Cu elements on Cu(In,Ga)Se2 film and solar cell
摘要
Abstract
The Cu elements of Cu (In, Ga) Se2 (CIGS) have very important influences on the electrical properties of CIGS absorber and solar cells. In this paper, Cu-poor and Cu-rich absorber layers (0.7<Cu/(Ga+In) (<1.15) and solar cells are prepared by evaporation method. The SEM and Hall measurements reveal that Cu-rich material shows superior structural (larger grain size, better crystalline) and electrical (lower resistivity, higher mobility) properties to Cu-poor material. However, I-V tests show that the efficiency of Cu-poor solar cell is better than that of the Cu-rich device. The temperature-dependent I-V tests indicate that electron loss is mainly due to the bulk recombination in Cu-poor solar cell, and the activation energy of recombination is comparable to the band gap energy of Cu-poor solar cell. In contrast, in the Cu-rich devices the recombination at the heterointerface is dominant, and the activation energy is smaller than the band gap energy of the absorber material, which is an important drawback of open circuit voltage. Finally, Cu-poor surface on Cu-rich absorber is prepared by three-stage evaporation process, which reduces the short-circuit current and open-circuit voltage loss and optimizes the performance of CIGS solar cells. The efficiency of CIGS solar cell is achieved to be as high as more than 15%.关键词
u(In,Ga)Se2太阳电池/Cu元素/激活能/开路电压Key words
Cu(In,Ga)Se2 film solar cell/Cu element/activation energy/open circuit voltage引用本文复制引用
刘芳芳,何青,周志强,孙云..Cu元素对Cu（In，Ga）Se2薄膜及太阳电池的影响[J].物理学报,2014,(6):067203-1-067203-6,6.基金项目
国家自然科学基金(批准号:61144002)和高等学校博士学科点专项科研基金(批准号：BE033511)资助的课题.@@@@Project supported by the National Natural Science Foundation of China (Grant No.61144002) and Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. BE033511) （批准号:61144002）
