物理学报Issue(8)：087301-1-087301-9,9.DOI:10.7498/aps.63.087301
高k栅介质GeOI 金属氧化物半导体场效应管阈值电压和亚阈斜率模型及其器件结构设计
Mo dels on threshold voltage/subthreshold swing and structural design of high-k gate dielectric GeOI MOSFET
摘要
Abstract
An analytical model on threshold voltage and subthreshold swing for high-k gate dielectric GeOI MOSFET (metal-oxide-semiconductor field-effect transistor) is established by considering the two-dimensional effects in both channel and buried-oxide layers and solving two-dimensional Poisson’s equation. The influences of the main structural parameters of the device on threshold voltage and subthreshold swing, and the short-channel effects, drain induction barrier lower effect and substrate-biased effect are investigated using the model, and the design principles and value range of the structural parameters are presented to optimize the electrical performances of the device. The simulated results are in good agreement with the TCAD simulated data, confirming the validity of the model.关键词
GeOI MOSFET/阈值电压/亚阈斜率/短沟道效应Key words
GeOI MOSFET/threshold voltage/subthreshold swing/short-channel effects引用本文复制引用
范敏敏,徐静平,刘璐,白玉蓉,黄勇..高k栅介质GeOI 金属氧化物半导体场效应管阈值电压和亚阈斜率模型及其器件结构设计[J].物理学报,2014,(8):087301-1-087301-9,9.基金项目
国家自然科学基金(批准号:61274112)资助的课题.@@@@ Project supported by the National Natural Science Foundation of China (Grant No.61274112) （批准号:61274112）
