西安工程大学学报Issue(6)：801-804,4.
半导体功率器件直流特性的自动脉冲测量
Auto-measurement for high-power devices by pulsed I-V method
孙玮 1孙钊2
作者信息
- 1. 武夷学院机电工程学院，福建武夷山354300
- 2. 西安工业大学电子信息工程学院，陕西西安710021
- 折叠
摘要
Abstract
To collect the right data of high-power MOSFETs with self-heating effect ,a novel Sagittarius automatic Pulsed I-V measurement system was developed .A short pulse with a low duty cycle technique was employed .The system was calibrated by empirical factor before the measurement started .The com-parison was done between the DC and pulsed I-V methods .The experimental results proved that the pulsed I-V method which produced real output conductance and trans-conductance data of high-power de-vices was correct and effective .Compared with conventional method ,this auto-measurement system can be 12 times faster .T he automatic pulsed I-V measurement system can provide relevant data for device modeling or industrial monitoring purpose .关键词
大功率场效应晶体管/自加热效应/脉冲电压/自动测量Key words
high power MOSFETs/self-heating/pulsed voltage/automatic measurement分类
信息技术与安全科学引用本文复制引用
孙玮,孙钊..半导体功率器件直流特性的自动脉冲测量[J].西安工程大学学报,2013,(6):801-804,4.
