现代电子技术Issue(9)：134-137,4.
一种RF-LDMOS内匹配电路设计方法
Design of internal-matching circuit for RF-LDMOS
摘要
Abstract
A de-embedding method to get the on-die input and output impedance of RF-LDMOS by testing and software ADS is introduced in this paper. Its accuracy was validated by testing. Two kinds of common internal-matching circuits and their characteristics are introduced. An independently-developed RF-LDMOS internal-matching circuit with 45 mm grid width was achieved by means of ADS and HFSS. The common procedures of internal-matching circuit design,and the realization of MOS-capacitor and the bonding-wire simulation with HFSS are described. The testing result proves that the matching circuit can realize the intended functions. The stable input/output impedance was obtained inside the working band. The gain at 1 dB compression point reachs 16.5 dB. The power at 1 dB compression point reachs 48.9 dBm. The power density of grid width per millimeter reachs 1.7 W/mm.关键词
RF-LDMOS/内匹配电路/MOS电容/键合线Key words
RF-LDMOS/internal-matching circuit/MOS capacitor/bonding wire分类
信息技术与安全科学引用本文复制引用
李赛,从密芳,李科,杜寰..一种RF-LDMOS内匹配电路设计方法[J].现代电子技术,2014,(9):134-137,4.基金项目
科技重大专项 （）
