原子能科学技术Issue(12)：2365-2369,5.DOI:10.7538/yzk.2013.47.12.2365
GaN 器件辐伏同位素电池的电输出性能研究
Electrical Performance of GaN Diode as Betavoltaic Isotope Battery Energy Converter
王关全 1杨玉青 1刘业兵 1胡睿 1李昊 1钟正坤 1罗顺忠1
作者信息
- 1. 中国工程物理研究院核物理与化学研究所，四川绵阳 621900
- 折叠
摘要
Abstract
Two kinds of GaN PiN diodes were prepared to be the energy converters of betavoltaic batteries ,and irradiated by 63 Ni and 3 H radioactive sources . The Isc was 5.4 nA and Voc was 771 mV for 63 Ni source;the Isc was 10.8 nA and Voc was 839 mV for 3 H source .These results show that their Voc are far better than silicon diodes’ ,but their Isc are poor .And there are some differences between the theory values and experi-ment results .There would be greatly improving space in electrical performance of beta-voltaic isotope batteries with GaN diodes as the energy converters ,if the dislocation could be reduced in GaN material producing process ,the Ohmic contact could be prepared very well and the diodes configuration could be designed more optimizedly in the future .关键词
辐伏同位素电池/GaN器件/电输出性能Key words
betavoltaic isotope battery/GaN diode/electrical performance分类
信息技术与安全科学引用本文复制引用
王关全,杨玉青,刘业兵,胡睿,李昊,钟正坤,罗顺忠..GaN 器件辐伏同位素电池的电输出性能研究[J].原子能科学技术,2013,(12):2365-2369,5.
