中国电机工程学报Issue(3)：371-379,9.DOI:10.13334/j.0258-8013.pcsee.2014.03.007
宽禁带碳化硅功率器件在电动汽车中的研究与应用
Researches and Applications of Wide Bandgap SiC Power Devices in Electric Vehicles
摘要
Abstract
The third generation of wide bandgap semiconductor as silicon carbide (SiC) breakthroughs the performance caps of silicon (Si) based power semiconductor devices in voltage, temperature, switching loss and switching speed, thus, the weight, size and cost of power electronic converters may be decreased, and the performance of power electronic system may be improved significantly. Power driver of electric vehicles with high power density is always the main development challenge of high power electric vehicles. The usage of wide bandgap semiconductors may has significant impacts on new generation electric vehicles, especially hybrid electric vehicles. In this paper, the development of SiC power devices is introduced first; then, research statues and application prospects of SiC devices in electric vehicle are presented; last, the main problems of EV driving system using SiC power devices are discussed.关键词
碳化硅/宽禁带/功率器件/电动汽车驱动系统Key words
silicon carbide (SiC)/wide bandgap/power devices/electrical vehicle driver system分类
信息技术与安全科学引用本文复制引用
王学梅..宽禁带碳化硅功率器件在电动汽车中的研究与应用[J].中国电机工程学报,2014,(3):371-379,9.基金项目
国家自然科学基金项目(50937001，51107044)；中央高校基本科研重点项目(2012ZZ0023)。Project Supported by the National Natural Science Foundation of China (50937001,51107044) （50937001，51107044）
The key Fundamental Research Funds for the Central Universities of China (2012ZZ0023) （2012ZZ0023）
