中国光学Issue(1)：79-88,10.DOI:10.3788/CO.20140701.0079
极紫外光学器件辐照污染检测技术
Techniques of radiation contamination monitoring for extreme ultraviolet devices
摘要
Abstract
This paper reviews the “in situ” surface analysis and monitoring techniques for contamination in-duced in Extreme Ultraviolet Lithography ( EUVL ) .It introduces the EUV lithography , reflective multilayer mirror and the mechanism of carbon contamination induced by EUV .It points out the requirement of the “in situ” surface analysis techniques in EUV lithography .The mainly surface analysis techniques are discussed . Analyzed results show the applied potentiality of each measurement used in the EUV optical system .Finally, it points out that the Fiber-based ellipsometry has further application prospect in “in situ” surface contamination monitoring of EUV lithography .关键词
极紫外光刻/碳污染检测/光纤椭偏仪Key words
Extreme Ultraviolet Lithography (EUVL)/carbon contamination monitoring/fiber-based ellipsom-etry分类
数理科学引用本文复制引用
王珣,金春水,匡尚奇,喻波..极紫外光学器件辐照污染检测技术[J].中国光学,2014,(1):79-88,10.基金项目
国家科技重大专项（02专项）资助项目 （）
