| 注册
首页|期刊导航|半导体学报(英文版)|Reconfigurable dual-band low noise amplifier design and realization

Reconfigurable dual-band low noise amplifier design and realization

Tang Xusheng Huang Fengyi Zhang Youming Tang Xin

半导体学报(英文版)2014,Vol.35Issue(5):86-92,7.
半导体学报(英文版)2014,Vol.35Issue(5):86-92,7.DOI:10.1088/1674-4926/35/5/055004

Reconfigurable dual-band low noise amplifier design and realization

Reconfigurable dual-band low noise amplifier design and realization

Tang Xusheng 1Huang Fengyi 1Zhang Youming 1Tang Xin1

作者信息

  • 1. RF & OEIC Research Institute, National Mobile Communications Research Laboratory, Southeast University, Nanjing 210096,China
  • 折叠

摘要

关键词

LNA/ reconfigurable/ dual-band/ IMT-A/ UWB/ CMOS

Key words

LNA/ reconfigurable/ dual-band/ IMT-A/ UWB/ CMOS

引用本文复制引用

Tang Xusheng,Huang Fengyi,Zhang Youming,Tang Xin..Reconfigurable dual-band low noise amplifier design and realization[J].半导体学报(英文版),2014,35(5):86-92,7.

基金项目

Project supported by the National High Technology Research and Development Program of China (No.2009AA01Z261) and the National Science and Technology Major Special Project (Nos.2009ZX03007-001,2012ZX03001-019). (No.2009AA01Z261)

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

访问量0
|
下载量0
段落导航相关论文