首页|期刊导航|半导体学报（英文版）|Performance enhancement of pentacene-based organic field-effect transistor by inserting a WO3 buffer layer

Performance enhancement of pentacene-based organic field-effect transistor by inserting a WO3 buffer layer

Fan Jianfeng Cheng Xiaoman Bai Xiao Zheng Lingcheng Jiang Jing Wu Feng

半导体学报（英文版）2014，Vol.35Issue(6)：38-41,4.

半导体学报（英文版）2014，Vol.35Issue(6)：38-41,4.DOI:10.1088/1674-4926/35/6/064004

Performance enhancement of pentacene-based organic field-effect transistor by inserting a WO3 buffer layer

Fan Jianfeng ¹Cheng Xiaoman ¹Bai Xiao ²Zheng Lingcheng ¹Jiang Jing ¹Wu Feng¹

作者信息

1. School of Science, Tianjin University of Technology, Tianjin 300384, China
2. Institute of Material Physics, Tianjin University of Technology, Key Laboratory of Display Material and Photoelectric Devices,Ministry of Education, Tianjin key Laboratory of Photoelectric Materials and Device, Tianjin 300384, China
折叠

摘要

关键词

organic field effect transistors/ contact resistance/ WO3 buffer layer

Key words

organic field effect transistors/ contact resistance/ WO3 buffer layer

引用本文复制引用

Fan Jianfeng,Cheng Xiaoman,Bai Xiao,Zheng Lingcheng,Jiang Jing,Wu Feng..Performance enhancement of pentacene-based organic field-effect transistor by inserting a WO3 buffer layer[J].半导体学报（英文版）,2014,35(6):38-41,4.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.61076065,11204214). （Nos.61076065,11204214）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

访问量3

下载量0

段落导航