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A novel DTSCR with a variation lateral base doping structure to improve turn-on speed for ESD protection

Liu Jizhi Liu Zhiwei Jia Ze Liou Juin.J.

半导体学报（英文版）2014，Vol.35Issue(6)：67-75,9.

半导体学报（英文版）2014，Vol.35Issue(6)：67-75,9.DOI:10.1088/1674-4926/35/6/064010

A novel DTSCR with a variation lateral base doping structure to improve turn-on speed for ESD protection

Liu Jizhi ¹Liu Zhiwei ¹Jia Ze ¹Liou Juin.J.²

作者信息

1. State Key Laboratory of Electronic Thin Films and Integrate Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
2. School of Electrical Engineering and Computer Science, University of Central Florida, Orlando, 32816, USA
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摘要

关键词

electrostatic discharge (ESD)/ double triggered silicon controlled rectifier (DTSCR)/ variation lateral base doping (VLBD)/ built-in electric field/ turn-on speed

Key words

electrostatic discharge (ESD)/ double triggered silicon controlled rectifier (DTSCR)/ variation lateral base doping (VLBD)/ built-in electric field/ turn-on speed

引用本文复制引用

Liu Jizhi,Liu Zhiwei,Jia Ze,Liou Juin.J...A novel DTSCR with a variation lateral base doping structure to improve turn-on speed for ESD protection[J].半导体学报（英文版）,2014,35(6):67-75,9.

基金项目

Project supported by the Chinese Universities Scientific Fund (No.ZYGX2011J030). （No.ZYGX2011J030）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

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