半导体学报（英文版）2014，Vol.35Issue(6)：119-122,4.DOI:10.1088/1674-4926/35/6/065006
Performance comparison of radiation-hardened layout techniques
Performance comparison of radiation-hardened layout techniques
Lü Lingjuan 1Liu Ruping 2Lin Min 1Sang Zehua 1Zou Shichang 1Yang Genqing1
作者信息
- 1. The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- 2. University of Chinese Academy of Sciences, Beijing 100049, China
- 折叠
摘要
关键词
total ionizing dose effect/ single event effect/ bulk silicon/ silicon on insulator/ radiation-hardened layout techniquesKey words
total ionizing dose effect/ single event effect/ bulk silicon/ silicon on insulator/ radiation-hardened layout techniques引用本文复制引用
Lü Lingjuan,Liu Ruping,Lin Min,Sang Zehua,Zou Shichang,Yang Genqing..Performance comparison of radiation-hardened layout techniques[J].半导体学报（英文版）,2014,35(6):119-122,4.
