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Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics

Yan Hongli Jia Renxu Tang Xiaoyan Song Qingwen Zhang Yuming

半导体学报（英文版）2014，Vol.35Issue(6)：128-131,4.

半导体学报（英文版）2014，Vol.35Issue(6)：128-131,4.DOI:10.1088/1674-4926/35/6/066001

Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics

Yan Hongli ¹Jia Renxu ¹Tang Xiaoyan ¹Song Qingwen ¹Zhang Yuming¹

作者信息

1. School of Microelectronics, Xidian University, Xi'an 710071, China
折叠

摘要

关键词

SiO2/SiC/ re-oxidation annealing/ effective dielectric charge/ interface trap

Key words

SiO2/SiC/ re-oxidation annealing/ effective dielectric charge/ interface trap

引用本文复制引用

Yan Hongli,Jia Renxu,Tang Xiaoyan,Song Qingwen,Zhang Yuming..Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics[J].半导体学报（英文版）,2014,35(6):128-131,4.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.51272202,61234006,61274079). （Nos.51272202,61234006,61274079）

半导体学报（英文版）

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ISSN：1674-4926

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