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Strain effects on band structure of wurtzite ZnO∶ a GGA + U study

Qiao Liping Chai Changchun Yang Yintang Yu Xinhai Shi Chunlei

半导体学报（英文版）2014，Vol.35Issue(7)：32-36,5.

半导体学报（英文版）2014，Vol.35Issue(7)：32-36,5.DOI:10.1088/1674-4926/35/7/073004

Strain effects on band structure of wurtzite ZnO∶ a GGA + U study

Qiao Liping ¹Chai Changchun ²Yang Yintang ¹Yu Xinhai ¹Shi Chunlei¹

作者信息

1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University,Xi'an 710071, China
2. School of Information Engineering, Tibet University for Nationalities, Xianyang 712082, China
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摘要

关键词

GGA + U/band gap/splitting energies/electron mass

Key words

GGA + U/band gap/splitting energies/electron mass

引用本文复制引用

Qiao Liping,Chai Changchun,Yang Yintang,Yu Xinhai,Shi Chunlei..Strain effects on band structure of wurtzite ZnO∶ a GGA + U study[J].半导体学报（英文版）,2014,35(7):32-36,5.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.60776034,61162025) and the National Basic Research Program of China (No.2014CC339900). （Nos.60776034,61162025）

半导体学报（英文版）

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ISSN：1674-4926

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