半导体学报（英文版）2014，Vol.35Issue(7)：52-55,4.DOI:10.1088/1674-4926/35/7/074004
Hot-carrier effects on irradiated deep submicron NMOSFET
Hot-carrier effects on irradiated deep submicron NMOSFET
Cui Jiangwei 1Zheng Qiwen 1Yu Xuefeng 2Cong Zhongchao 1Zhou Hang 1Guo Qi 2Wen Lin1
作者信息
- 1. Key Laboratory of Functional Materials and Devices Under Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electric Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China
- 2. University of Chinese Academy of Sciences, Beijing 100049, China
- 折叠
摘要
关键词
γ ray irradiation/deep submicron/hot-carrier effectKey words
γ ray irradiation/deep submicron/hot-carrier effect引用本文复制引用
Cui Jiangwei,Zheng Qiwen,Yu Xuefeng,Cong Zhongchao,Zhou Hang,Guo Qi,Wen Lin..Hot-carrier effects on irradiated deep submicron NMOSFET[J].半导体学报（英文版）,2014,35(7):52-55,4.
