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GaN-based high-voltage light-emitting diodes with backside reflector

Huang Huamao Wang Hong Huang Xiaosheng Hu Jinyong

半导体学报（英文版）2014，Vol.35Issue(7)：97-101,5.

半导体学报（英文版）2014，Vol.35Issue(7)：97-101,5.DOI:10.1088/1674-4926/35/7/074013

GaN-based high-voltage light-emitting diodes with backside reflector

Huang Huamao ¹Wang Hong ¹Huang Xiaosheng ¹Hu Jinyong¹

作者信息

1. Engineering Research Center for Optoelectronics of Guangdong Province, Department of Physics, School of Science, South China University of Technology, Guangzhou 510640, China
折叠

摘要

关键词

high-voltage light-emitting diodes/hybrid backside reflector/distributed Bragg reflector/metal reflector/light extraction efficiency

Key words

high-voltage light-emitting diodes/hybrid backside reflector/distributed Bragg reflector/metal reflector/light extraction efficiency

引用本文复制引用

Huang Huamao,Wang Hong,Huang Xiaosheng,Hu Jinyong..GaN-based high-voltage light-emitting diodes with backside reflector[J].半导体学报（英文版）,2014,35(7):97-101,5.

基金项目

Project supported by the Strategic Emerging Industry Special funds of Guangdong Province,China (Nos.2010A081002009,2011A081301004,2012A080302003),the Key Technologies R&D Program of Guangzhou City,China (No.2011Y5-00006),and the Fundamental Research Funds for the Central Universities,China (Nos.2013ZM093,2013ZP0017). （Nos.2010A081002009,2011A081301004,2012A080302003）

半导体学报（英文版）

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ISSN：1674-4926

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