半导体学报（英文版）2014，Vol.35Issue(7)：155-159,5.DOI:10.1088/1674-4926/35/7/075007
A novel sourceline voltage compensation circuit for embedded NOR flash memory
A novel sourceline voltage compensation circuit for embedded NOR flash memory
Zhang Shengbo 1Yang Guangjun 2Hu Jian 3Xiao Jun3
作者信息
- 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- 2. University of Chinese Academy of Sciences, Beijing 100049, China
- 3. Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China
- 折叠
摘要
关键词
charge pump/flash memory/sourceline voltage compensation circuit/split-gate flash memory cellKey words
charge pump/flash memory/sourceline voltage compensation circuit/split-gate flash memory cell引用本文复制引用
Zhang Shengbo,Yang Guangjun,Hu Jian,Xiao Jun..A novel sourceline voltage compensation circuit for embedded NOR flash memory[J].半导体学报（英文版）,2014,35(7):155-159,5.
