半导体学报（英文版）2014，Vol.35Issue(8)：10-14,5.DOI:10.1088/1674-4926/35/8/082001
Influence of temperature on tunneling-enhanced recombination in Si based p-i-n photodiodes
Influence of temperature on tunneling-enhanced recombination in Si based p-i-n photodiodes
P.Dalapati 1N.B.Manik 1A.N.Basu1
作者信息
- 1. Condensed Matter Physics Research Center, Department of Physics, Jadavpur University, Kolkata 700032, India
- 折叠
摘要
关键词
photodiode/ low temperature/ ideality factor/ reverse saturation current/ tunneling energyKey words
photodiode/ low temperature/ ideality factor/ reverse saturation current/ tunneling energy引用本文复制引用
P.Dalapati,N.B.Manik,A.N.Basu..Influence of temperature on tunneling-enhanced recombination in Si based p-i-n photodiodes[J].半导体学报（英文版）,2014,35(8):10-14,5.
