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Influence of finite size probes on the measurement of electrical resistivity using the four-probe technique

He Kai Li Yang Chen Xing Wang Jianxin Zhang Qinyao

半导体学报(英文版)2014,Vol.35Issue(8):20-23,4.
半导体学报(英文版)2014,Vol.35Issue(8):20-23,4.DOI:10.1088/1674-4926/35/8/082003

Influence of finite size probes on the measurement of electrical resistivity using the four-probe technique

Influence of finite size probes on the measurement of electrical resistivity using the four-probe technique

He Kai 1Li Yang 2Chen Xing 1Wang Jianxin 2Zhang Qinyao1

作者信息

  • 1. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2. University of Chinese Academy of Sciences, Beijing 100049, China
  • 折叠

摘要

关键词

electrical resistance/ four-probe technique/ finite size probes/ image method

Key words

electrical resistance/ four-probe technique/ finite size probes/ image method

引用本文复制引用

He Kai,Li Yang,Chen Xing,Wang Jianxin,Zhang Qinyao..Influence of finite size probes on the measurement of electrical resistivity using the four-probe technique[J].半导体学报(英文版),2014,35(8):20-23,4.

基金项目

Project supported by the Innovation Project of the Shanghai Institute of Technical Physics,CAS (No.CXJJ-Q-DX-57). (No.CXJJ-Q-DX-57)

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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