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Simulation and analysis of Si deposition in turbulent CVD reactors

Wei Jiaxing Xu Rui Yu Yanfei Hou Jinliang Li Changfeng

半导体学报（英文版）2014，Vol.35Issue(8)：33-37,5.

半导体学报（英文版）2014，Vol.35Issue(8)：33-37,5.DOI:10.1088/1674-4926/35/8/083002

Simulation and analysis of Si deposition in turbulent CVD reactors

Wei Jiaxing ¹Xu Rui ¹Yu Yanfei ¹Hou Jinliang ¹Li Changfeng¹

作者信息

1. School of Energy and Power Engineering,Jiangsu University, Zhenjiang 212013, China
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摘要

关键词

chemical vapor deposition/ turbulence/ deposition rate/ natural convection

Key words

chemical vapor deposition/ turbulence/ deposition rate/ natural convection

引用本文复制引用

Wei Jiaxing,Xu Rui,Yu Yanfei,Hou Jinliang,Li Changfeng..Simulation and analysis of Si deposition in turbulent CVD reactors[J].半导体学报（英文版）,2014,35(8):33-37,5.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.10672069,11072091) and the Key Science Technology Research Project from Ministry of Education,China (No.210078). （Nos.10672069,11072091）

半导体学报（英文版）

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ISSN：1674-4926

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