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Physical effect of carrier distribution in the channel of static induction thyristor

Liu Chunjuan Wang Zaixing Wang Yongshun

半导体学报（英文版）2014，Vol.35Issue(8)：84-88,5.

半导体学报（英文版）2014，Vol.35Issue(8)：84-88,5.DOI:10.1088/1674-4926/35/8/084005

Physical effect of carrier distribution in the channel of static induction thyristor

Liu Chunjuan ¹Wang Zaixing ¹Wang Yongshun¹

作者信息

1. College of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China
折叠

摘要

关键词

static induction thyristor/ carrier distribution/ potential barrier/ space charge distribution

Key words

static induction thyristor/ carrier distribution/ potential barrier/ space charge distribution

引用本文复制引用

Liu Chunjuan,Wang Zaixing,Wang Yongshun..Physical effect of carrier distribution in the channel of static induction thyristor[J].半导体学报（英文版）,2014,35(8):84-88,5.

基金项目

Project supported by the National Natural Science Foundation of China (No.61366006),and the Scientific and Technological Supporting Programme of Gansu Province,China (No.1304GKCA012). （No.61366006）

半导体学报（英文版）

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ISSN：1674-4926

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