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GaN-based light-emitting diodes with hybrid micro/nano-textured indium-tin-oxide layer

Huang Huamao Hu Jinyong Wang Hong

半导体学报（英文版）2014，Vol.35Issue(8)：89-93,5.

半导体学报（英文版）2014，Vol.35Issue(8)：89-93,5.DOI:10.1088/1674-4926/35/8/084006

GaN-based light-emitting diodes with hybrid micro/nano-textured indium-tin-oxide layer

Huang Huamao ¹Hu Jinyong ¹Wang Hong¹

作者信息

1. Engineering Research Center for Optoelectronics of Guangdong Province, Department of Physics, School of Science, South China University of Technology, Guangzhou 510640, China
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摘要

关键词

light-emitting diodes/ hybrid micro/nano-textured/ indium-tin-oxide/ light-output

Key words

light-emitting diodes/ hybrid micro/nano-textured/ indium-tin-oxide/ light-output

引用本文复制引用

Huang Huamao,Hu Jinyong,Wang Hong..GaN-based light-emitting diodes with hybrid micro/nano-textured indium-tin-oxide layer[J].半导体学报（英文版）,2014,35(8):89-93,5.

基金项目

Project supported by the National High Technology Research and Development Program of China (No.2014AA032609),the Strategic Emerging Industry Special Funds of Guangdong Province (Nos.2010A081002009,2011A081301004,2012A080302003),and the Fundamental Research Funds for the Central Universities (Nos.2013ZM093,2013ZP0017). （No.2014AA032609）

半导体学报（英文版）

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ISSN：1674-4926

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