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Sheet carrier density dependent Rashba spin splitting in the Al0.5Ga0.5N/GaN/Al0.5Ga0.5N quantum well

Cai Ziliang Li Ming Fan Libo

半导体学报(英文版)2014,Vol.35Issue(9):6-10,5.
半导体学报(英文版)2014,Vol.35Issue(9):6-10,5.DOI:10.1088/1674-4926/35/9/092002

Sheet carrier density dependent Rashba spin splitting in the Al0.5Ga0.5N/GaN/Al0.5Ga0.5N quantum well

Sheet carrier density dependent Rashba spin splitting in the Al0.5Ga0.5N/GaN/Al0.5Ga0.5N quantum well

Cai Ziliang 1Li Ming 1Fan Libo1

作者信息

  • 1. College of Electrical and Information Engineering, Xuchang University, Xuchang 461000, China
  • 折叠

摘要

关键词

Rashba spin splitting/intersubband spin-orbit coupling/self-consistent calculation/2DEG

Key words

Rashba spin splitting/intersubband spin-orbit coupling/self-consistent calculation/2DEG

引用本文复制引用

Cai Ziliang,Li Ming,Fan Libo..Sheet carrier density dependent Rashba spin splitting in the Al0.5Ga0.5N/GaN/Al0.5Ga0.5N quantum well[J].半导体学报(英文版),2014,35(9):6-10,5.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.61306012,11004168) and the Program for Science & Technology Innovation Talents in Universities of Henan Province (No.2012HASTIT033). (Nos.61306012,11004168)

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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