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Anomalous temperature-dependent photoluminescence peak energy in InAIN alloys

Li Wei Jin Peng Wang Weiying Mao Defeng Liu Guipeng Wang Zhanguo Wang Jiaming

半导体学报（英文版）2014，Vol.35Issue(9)：16-20,5.

半导体学报（英文版）2014，Vol.35Issue(9)：16-20,5.DOI:10.1088/1674-4926/35/9/093001

Anomalous temperature-dependent photoluminescence peak energy in InAIN alloys

Li Wei ¹Jin Peng ¹Wang Weiying ¹Mao Defeng ¹Liu Guipeng ¹Wang Zhanguo ¹Wang Jiaming²

作者信息

1. Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University,Beijing 100871, China
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摘要

关键词

InAlN/photoluminescence/thermal activation/V-defects

Key words

InAlN/photoluminescence/thermal activation/V-defects

引用本文复制引用

Li Wei,Jin Peng,Wang Weiying,Mao Defeng,Liu Guipeng,Wang Zhanguo,Wang Jiaming..Anomalous temperature-dependent photoluminescence peak energy in InAIN alloys[J].半导体学报（英文版）,2014,35(9):16-20,5.

基金项目

Project supported by the National Basic Research Program of China (No.2012CB619306). （No.2012CB619306）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

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