首页|期刊导航|半导体学报（英文版）|Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors

Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors

Luan Chongbiao Lin Zhaojun Lü Yuanjie Feng Zhihong Zhao Jingtao Zhou Yang Yang Ming

半导体学报（英文版）2014，Vol.35Issue(9)：65-70,6.

半导体学报（英文版）2014，Vol.35Issue(9)：65-70,6.DOI:10.1088/1674-4926/35/9/094007

Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors

Luan Chongbiao ¹Lin Zhaojun ¹Lü Yuanjie ²Feng Zhihong ²Zhao Jingtao ¹Zhou Yang ¹Yang Ming¹

作者信息

1. School of Physics, Shandong University, Ji'nan 250100, China
2. National Key Laboratory of Application Specific Integrated Circuit(ASIC), Hebei Semiconductor Research Institute,Shijiazhuang 050051, China
折叠

摘要

关键词

Ⅲ-Ⅴ nitride and AlGaAs/GaAs HFETs/polarization Coulomb field scattering/2DEG electron mobility

Key words

Ⅲ-Ⅴ nitride and AlGaAs/GaAs HFETs/polarization Coulomb field scattering/2DEG electron mobility

引用本文复制引用

Luan Chongbiao,Lin Zhaojun,Lü Yuanjie,Feng Zhihong,Zhao Jingtao,Zhou Yang,Yang Ming..Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors[J].半导体学报（英文版）,2014,35(9):65-70,6.

基金项目

Project supported by the National Natural Science Foundation of China (No.11174182),the Specialized Research Fund for the Doctoral Program of Higher Education (No.20110131110005),and the Graduate Independent Innovation Foundation of Shandong University,GIIFSDU (No.yzc12064). （No.11174182）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航