半导体学报（英文版）2014，Vol.35Issue(10)：26-29,4.DOI:10.1088/1674-4926/35/10/104001
Model development for analyzing 2DEG sheet charge density and threshold voltage considering interface DOS for AlInN/GaN MOSHEMT
Model development for analyzing 2DEG sheet charge density and threshold voltage considering interface DOS for AlInN/GaN MOSHEMT
Devashish Pandey 1T.R.Lenka1
作者信息
- 1. Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Assam, 788010, India
- 折叠
摘要
关键词
DOS/ AlInN/ MOSHEMT/ 2DEG/ barrier scalingKey words
DOS/ AlInN/ MOSHEMT/ 2DEG/ barrier scaling引用本文复制引用
Devashish Pandey,T.R.Lenka..Model development for analyzing 2DEG sheet charge density and threshold voltage considering interface DOS for AlInN/GaN MOSHEMT[J].半导体学报（英文版）,2014,35(10):26-29,4.
