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Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM

Sun Pengxiao Liu Su Li Ling Liu Ming

半导体学报（英文版）2014，Vol.35Issue(10)：56-59,4.

半导体学报（英文版）2014，Vol.35Issue(10)：56-59,4.DOI:10.1088/1674-4926/35/10/104007

Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM

Sun Pengxiao ¹Liu Su ²Li Ling ¹Liu Ming²

作者信息

1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
2. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
折叠

摘要

关键词

ReRAM/ Monte Carlo method/ growth direction of filament/ ion migration rate

Key words

ReRAM/ Monte Carlo method/ growth direction of filament/ ion migration rate

引用本文复制引用

Sun Pengxiao,Liu Su,Li Ling,Liu Ming..Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM[J].半导体学报（英文版）,2014,35(10):56-59,4.

基金项目

Project supported by the Ministry of Science and Technology of China (Nos.2010CB934200,2011CBA00602,2009CB930803,2011CB921804,2011AA010401,2011AA010402,XDA06020102) and the National Natural Science Foundation of China (Nos.61221004,61274091,60825403,61106119,61106082,61306117). （Nos.2010CB934200,2011CBA00602,2009CB930803,2011CB921804,2011AA010401,2011AA010402,XDA06020102）

半导体学报（英文版）

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ISSN：1674-4926

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