半导体学报（英文版）2014，Vol.35Issue(10)：80-84,5.DOI:10.1088/1674-4926/35/10/104012
The storage lifetime model based on multi-performance degradation parameters
The storage lifetime model based on multi-performance degradation parameters
Qi Haochun 1Zhang Xiaoling 2Xie Xuesong 1Lü Changzhi1
作者信息
- 1. Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
- 2. The Chinese People's Liberation Army 68129 Troops, Lanzhou 730060, China
- 折叠
摘要
关键词
semiconductor device reliability/ lifetime estimation/ prediction methodsKey words
semiconductor device reliability/ lifetime estimation/ prediction methods引用本文复制引用
Qi Haochun,Zhang Xiaoling,Xie Xuesong,Lü Changzhi..The storage lifetime model based on multi-performance degradation parameters[J].半导体学报（英文版）,2014,35(10):80-84,5.
