半导体学报（英文版）2014，Vol.35Issue(10)：182-186,5.DOI:10.1088/1674-4926/35/10/106001
Combining a multi deposition multi annealing technique with a scavenging (Ti) to improve the high-k/metal gate stack performance for a gate-last process
Combining a multi deposition multi annealing technique with a scavenging (Ti) to improve the high-k/metal gate stack performance for a gate-last process
Zhang ShuXiang 1Yang Hong 1Tang Bo 1Tang Zhaoyun 1Xu Yefeng 1Xu Jing 1Yan Jiang1
作者信息
- 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- 折叠
摘要
关键词
postdeposition annealing/ scavenging/ oxygen vacancy/ equivalent oxide thickness/ metal gate/high-kKey words
postdeposition annealing/ scavenging/ oxygen vacancy/ equivalent oxide thickness/ metal gate/high-k引用本文复制引用
Zhang ShuXiang,Yang Hong,Tang Bo,Tang Zhaoyun,Xu Yefeng,Xu Jing,Yan Jiang..Combining a multi deposition multi annealing technique with a scavenging (Ti) to improve the high-k/metal gate stack performance for a gate-last process[J].半导体学报（英文版）,2014,35(10):182-186,5.
