半导体学报（英文版）2014，Vol.35Issue(11)：16-19,4.DOI:10.1088/1674-4926/35/11/113003
A photoluminescence study of plasma reactive ion etching-induced damage in GaN
A photoluminescence study of plasma reactive ion etching-induced damage in GaN
Z.Mouffak 1A.Bensaoula 2L.Trombetta3
作者信息
- 1. ECE Department, California State University, Fresno CA 93740, USA
- 2. Physics and ECE Departments, University of Houston, TX 77004, USA
- 3. ECE Department, University of Houston, TX 77004, USA
- 折叠
摘要
关键词
GaN/ etch damage/ photoluminescence/ reactive ion etchingKey words
GaN/ etch damage/ photoluminescence/ reactive ion etching引用本文复制引用
Z.Mouffak,A.Bensaoula,L.Trombetta..A photoluminescence study of plasma reactive ion etching-induced damage in GaN[J].半导体学报（英文版）,2014,35(11):16-19,4.
