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Growth and characterization of InGaN back barrier HEMTs structure with a compositionally step-graded AlGaN layer

Tang Jian Wang Xiaoliang Xiao Hongling

半导体学报（英文版）2014，Vol.35Issue(11)：27-31,5.

半导体学报（英文版）2014，Vol.35Issue(11)：27-31,5.DOI:10.1088/1674-4926/35/11/113006

Growth and characterization of InGaN back barrier HEMTs structure with a compositionally step-graded AlGaN layer

Tang Jian ¹Wang Xiaoliang ²Xiao Hongling²

作者信息

1. School of Physics & Electronics, Yancheng Teachers University, Yancheng 224002, China
2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China
折叠

摘要

关键词

GaN/ HEMT/ back barrier/ step-graded

Key words

GaN/ HEMT/ back barrier/ step-graded

引用本文复制引用

Tang Jian,Wang Xiaoliang,Xiao Hongling..Growth and characterization of InGaN back barrier HEMTs structure with a compositionally step-graded AlGaN layer[J].半导体学报（英文版）,2014,35(11):27-31,5.

基金项目

Project supported by the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province,China (No.13KJB510037). （No.13KJB510037）

半导体学报（英文版）

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ISSN：1674-4926

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