首页|期刊导航|半导体学报(英文版)|The combined effects of halo and linear doping effects on the high-frequency and switching performance in ballistic CNTFETs

The combined effects of halo and linear doping effects on the high-frequency and switching performance in ballistic CNTFETsOACSCDCSTPCD

The combined effects of halo and linear doping effects on the high-frequency and switching performance in ballistic CNTFETs

Wang Wei;Zhang Lu;Wang Xueying;Wang Zhubing;Zhang Ting;Li Na;Yang Xiao

College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, ChinaCollege of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, ChinaCollege of Telecommunications and information Engineering, Nanjing University of Posts and Telecommunications,Nanjing 210003, ChinaCollege of Telecommunications and information Engineering, Nanjing University of Posts and Telecommunications,Nanjing 210003, ChinaCollege of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, ChinaCollege of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, ChinaCollege of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

CNTFET NEGF Halo doping SCE linear doping

CNTFET NEGF Halo doping SCE linear doping

《半导体学报(英文版)》 2014 (11)

51-58,8

10.1088/1674-4926/35/11/114004

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