半导体学报（英文版）2014，Vol.35Issue(11)：59-63,5.DOI:10.1088/1674-4926/35/11/114005
A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET
A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET
Shiromani Balmukund Rahi 1Bahniman Ghosh 2Pranav Asthana1
作者信息
- 1. Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India
- 2. Microelectronics Research Center, 10100, Burnet Road, Bldg.160, University of Texas at Austin, Austin, TX, 78758, USA
- 折叠
摘要
关键词
band-to-band tunneling (BTBT)/ TFET/ heterostructure junctionless tunnel field effect transistor (HJL-TFET)/ ION/IOFF ratio subthreshold slope/ VLSIKey words
band-to-band tunneling (BTBT)/ TFET/ heterostructure junctionless tunnel field effect transistor (HJL-TFET)/ ION/IOFF ratio subthreshold slope/ VLSI引用本文复制引用
Shiromani Balmukund Rahi,Bahniman Ghosh,Pranav Asthana..A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET[J].半导体学报（英文版）,2014,35(11):59-63,5.
