|国家科技期刊平台
| 注册
首页|期刊导航|半导体学报（英文版）|Process techniques of charge transfer time reduction for high speed CMOS image sensors

Process techniques of charge transfer time reduction for high speed CMOS image sensors

Cao Zhongxiang Li Quanliang Han Ye Qin Qi Feng Peng Liu Liyuan Wu Nanjian

半导体学报（英文版）2014，Vol.35Issue(11)：90-97,8.
✕
半导体学报（英文版）2014，Vol.35Issue(11)：90-97,8.DOI:10.1088/1674-4926/35/11/114010

Process techniques of charge transfer time reduction for high speed CMOS image sensors

Process techniques of charge transfer time reduction for high speed CMOS image sensors

Cao Zhongxiang 1Li Quanliang 1Han Ye 1Qin Qi 1Feng Peng 1Liu Liyuan 1Wu Nanjian1

作者信息

  • 1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China
  • 折叠

摘要

关键词

CMOS image sensors/ high speed/ large-area pinned photodiode/ charge transfer time/ doping concentration/ depletion mode transistor

Key words

CMOS image sensors/ high speed/ large-area pinned photodiode/ charge transfer time/ doping concentration/ depletion mode transistor

引用本文复制引用

Cao Zhongxiang,Li Quanliang,Han Ye,Qin Qi,Feng Peng,Liu Liyuan,Wu Nanjian..Process techniques of charge transfer time reduction for high speed CMOS image sensors[J].半导体学报（英文版）,2014,35(11):90-97,8.

基金项目

Project supported by the National Natural Science Foundation of China (No.61234003) and the Special Funds for Major State Basic Research Project of China (No.2011CB932902). （No.61234003）

半导体学报（英文版）

OACSCDCSTPCDEI

1674-4926

访问量0
|
下载量0
段落导航相关论文