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Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Zhao Jingtao Lin Zhaojun Luan Chongbiao Yang Ming Zhou Yang Lü Yuanjie Feng Zhihong

半导体学报（英文版）2014，Vol.35Issue(12)：28-31,4.

半导体学报（英文版）2014，Vol.35Issue(12)：28-31,4.DOI:10.1088/1674-4926/35/12/124003

Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Zhao Jingtao ¹Lin Zhaojun ¹Luan Chongbiao ¹Yang Ming ¹Zhou Yang ¹Lü Yuanjie ²Feng Zhihong²

作者信息

1. School of Physics, Shandong University, Jinan 250100, China
2. National Key Laboratory of Application Specific Integrated Circuit(ASIC), Hebei Semiconductor Research Institute,Shijiazhuang 050051, China
折叠

摘要

关键词

side-ohmic contact/ AlN/GaN/ heterostructure field effect transistor

Key words

side-ohmic contact/ AlN/GaN/ heterostructure field effect transistor

引用本文复制引用

Zhao Jingtao,Lin Zhaojun,Luan Chongbiao,Yang Ming,Zhou Yang,Lü Yuanjie,Feng Zhihong..Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors[J].半导体学报（英文版）,2014,35(12):28-31,4.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.11174182,61306113) and the Specialized Research Fund for the Doctoral Program of Higher Education (No.20110131110005). （Nos.11174182,61306113）

半导体学报（英文版）

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ISSN：1674-4926

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