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Performance analysis of InSb based QWFET for ultra high speed applications

T.D.Subash T.Gnanasekaran C.Divya

半导体学报(英文版)2015,Vol.36Issue(1):60-63,4.
半导体学报(英文版)2015,Vol.36Issue(1):60-63,4.DOI:10.1088/1674-4926/36/1/014003

Performance analysis of InSb based QWFET for ultra high speed applications

Performance analysis of InSb based QWFET for ultra high speed applications

T.D.Subash 1T.Gnanasekaran 2C.Divya3

作者信息

  • 1. K.N.S.K College of Engineering, Nagercoil-629901, India
  • 2. Department of IT, RMK College of Engineering and Technology, 629401, India
  • 3. Centre for IT & Eng, Manonmaniam Sundaranar University, 627012, India
  • 折叠

摘要

关键词

QWFET/ InSb/ gate length/ cut-off frequency/ short-channel effects

Key words

QWFET/ InSb/ gate length/ cut-off frequency/ short-channel effects

引用本文复制引用

T.D.Subash,T.Gnanasekaran,C.Divya..Performance analysis of InSb based QWFET for ultra high speed applications[J].半导体学报(英文版),2015,36(1):60-63,4.

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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