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An improved trench gate super-junction IGBT with double emitter

Dai Weinan Zhu Jing Sun Weifeng Du Yicheng Huang Keqin

半导体学报（英文版）2015，Vol.36Issue(1)：95-100,6.

半导体学报（英文版）2015，Vol.36Issue(1)：95-100,6.DOI:10.1088/1674-4926/36/1/014009

An improved trench gate super-junction IGBT with double emitter

Dai Weinan ¹Zhu Jing ¹Sun Weifeng ¹Du Yicheng ¹Huang Keqin¹

作者信息

1. National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China
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摘要

关键词

trench gate/ super-junction (SJ)/ insulated-gate bipolar transistor (IGBT)/ latch-up

Key words

trench gate/ super-junction (SJ)/ insulated-gate bipolar transistor (IGBT)/ latch-up

引用本文复制引用

Dai Weinan,Zhu Jing,Sun Weifeng,Du Yicheng,Huang Keqin..An improved trench gate super-junction IGBT with double emitter[J].半导体学报（英文版）,2015,36(1):95-100,6.

基金项目

Project supported by the National Natural Science Foundation of China (No.61204083),the Natural Science Foundation of the Jiangsu Province of China (Nos.BK2012204,BY2011146),and the Scientific Research Guidance Foundation of Southeast University Wuxi Branch Campus. （No.61204083）

半导体学报（英文版）

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ISSN：1674-4926

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