首页|期刊导航|半导体学报（英文版）|Effect of hydrogen on low temperature epitaxial growth of polycrystalline silicon by hot wire chemical vapor deposition
半导体学报（英文版）2015，Vol.36Issue(2)：29-33,5.DOI:10.1088/1674-4926/36/2/023004
Effect of hydrogen on low temperature epitaxial growth of polycrystalline silicon by hot wire chemical vapor deposition
Effect of hydrogen on low temperature epitaxial growth of polycrystalline silicon by hot wire chemical vapor deposition
摘要
关键词
polycrystalline silicon/ hot-wire chemical vapor deposition/ low temperature epitaxial growthKey words
polycrystalline silicon/ hot-wire chemical vapor deposition/ low temperature epitaxial growth引用本文复制引用
Cao Yong,Zhang Hailong,Liu Fengzhen,Zhu Meifang,Dong Gangqiang..Effect of hydrogen on low temperature epitaxial growth of polycrystalline silicon by hot wire chemical vapor deposition[J].半导体学报（英文版）,2015,36(2):29-33,5.基金项目
Project supported by the Beijing City Science and Technology Project (No.D121100001812003) and the National Basic Research Program of China (No.2011CBA00705). （No.D121100001812003）
