半导体学报（英文版）2015，Vol.36Issue(2)：42-47,6.DOI:10.1088/1674-4926/36/2/024001
Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect
Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect
Shoubhik Gupta 1Bahniman Ghosh 1Shiromani Balmukund Rahi1
作者信息
- 1. Department of Electrical Engineering, Indian Institute of Technology Kanpur, India
- 折叠
摘要
关键词
quantum-mechanical effect/ junction-less transistor/ threshold voltage/ oxide thicknessKey words
quantum-mechanical effect/ junction-less transistor/ threshold voltage/ oxide thickness引用本文复制引用
Shoubhik Gupta,Bahniman Ghosh,Shiromani Balmukund Rahi..Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect[J].半导体学报（英文版）,2015,36(2):42-47,6.
