半导体学报（英文版）2015，Vol.36Issue(2)：56-61,6.DOI:10.1088/1674-4926/36/2/024003
High performance 20 nm GaSb/InAs junctionless tunnel field effect transistor for low power supply
High performance 20 nm GaSb/InAs junctionless tunnel field effect transistor for low power supply
Pranav Kumar Asthana1
作者信息
- 1. Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India
- 折叠
摘要
关键词
band tunneling (BTBT)/ tunnel field effect transistor (TFET)/ junctionless tunnel field effect transistor (JLTFET)/ ION/IOFF ratio/ low power/ digital switchingKey words
band tunneling (BTBT)/ tunnel field effect transistor (TFET)/ junctionless tunnel field effect transistor (JLTFET)/ ION/IOFF ratio/ low power/ digital switching引用本文复制引用
Pranav Kumar Asthana..High performance 20 nm GaSb/InAs junctionless tunnel field effect transistor for low power supply[J].半导体学报（英文版）,2015,36(2):56-61,6.
