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Novel 700 V high-voltage SOI LDMOS structure with folded drift region

Li Qi Li Haiou Zhai Jianghui Tang Ning

半导体学报（英文版）2015，Vol.36Issue(2)：87-91,5.

半导体学报（英文版）2015，Vol.36Issue(2)：87-91,5.DOI:10.1088/1674-4926/36/2/024008

Novel 700 V high-voltage SOI LDMOS structure with folded drift region

Li Qi ¹Li Haiou ²Zhai Jianghui ¹Tang Ning¹

作者信息

1. Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China
2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
折叠

摘要

关键词

folded drift region/ breakdown voltage/ interdigital oxide layer/ electric field modulation

Key words

folded drift region/ breakdown voltage/ interdigital oxide layer/ electric field modulation

引用本文复制引用

Li Qi,Li Haiou,Zhai Jianghui,Tang Ning..Novel 700 V high-voltage SOI LDMOS structure with folded drift region[J].半导体学报（英文版）,2015,36(2):87-91,5.

基金项目

Project supported by the State Key Laboratory of Electronic Thin Films and Integrated Devices,UESTC (No.KFJJ201205),the Guangxi Department of Education (No.201202ZD041),the China Postdoctoral Science Foundation (Nos.2012M521127,2013T60566),and the National Natural Science Foundation of China (Nos.61361011,61274077,61464003). （No.KFJJ201205）

半导体学报（英文版）

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ISSN：1674-4926

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