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A transmission line-type electrical model for tapered TSV considering MOS effect and frequency-dependent behavior

Liu Song Shan Guangbao Xie Chengmin Du Xinrong

半导体学报（英文版）2015，Vol.36Issue(2)：92-98,7.

半导体学报（英文版）2015，Vol.36Issue(2)：92-98,7.DOI:10.1088/1674-4926/36/2/024009

A transmission line-type electrical model for tapered TSV considering MOS effect and frequency-dependent behavior

Liu Song ¹Shan Guangbao ¹Xie Chengmin ¹Du Xinrong¹

作者信息

1. Department of Postgraduates, Xian Microelectronics Technology Research Institute, Xi'an 710065, China
折叠

摘要

关键词

3D IC/ TSV/ TSV electrical model/ MOS effect/ transmission line

Key words

3D IC/ TSV/ TSV electrical model/ MOS effect/ transmission line

引用本文复制引用

Liu Song,Shan Guangbao,Xie Chengmin,Du Xinrong..A transmission line-type electrical model for tapered TSV considering MOS effect and frequency-dependent behavior[J].半导体学报（英文版）,2015,36(2):92-98,7.

基金项目

Project supported by the National Defense Basic Scientific Research Program of China (No.A0320132012). （No.A0320132012）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

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