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Planarization effect evaluation of acid and alkaline slurries in the copper interconnect process

Hu Yi Li Yan Liu Yuling He Yangang

半导体学报（英文版）2015，Vol.36Issue(3)：135-140,6.

半导体学报（英文版）2015，Vol.36Issue(3)：135-140,6.DOI:10.1088/1674-4926/36/3/036001

Planarization effect evaluation of acid and alkaline slurries in the copper interconnect process

Hu Yi ¹Li Yan ²Liu Yuling ²He Yangang²

作者信息

1. Xinjiang Normal University, School of Chemistry & Chemical Engineering, Urumqi 830054, China
2. Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China
折叠

摘要

关键词

alkaline slurry/ chemical mechanical polishing/ remove rate/ roughness/ dishing and erosion

Key words

alkaline slurry/ chemical mechanical polishing/ remove rate/ roughness/ dishing and erosion

引用本文复制引用

Hu Yi,Li Yan,Liu Yuling,He Yangang..Planarization effect evaluation of acid and alkaline slurries in the copper interconnect process[J].半导体学报（英文版）,2015,36(3):135-140,6.

基金项目

Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan (No.2009ZX02308),the Doctoral Program Foundation of Xinjiang Normal University Plan (No.XJNUBS1226),the Key Laboratory of Coal Gasification,Ministry of Education,and the Inorganic Chemistry Key Disciplines of Xinjiang Normal University. （No.2009ZX02308）

半导体学报（英文版）

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ISSN：1674-4926

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